Functional Possibilities of Strong Compensated Leggier Si with the different Deep Energetic Levels Impurities in Electronics

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N.F. Zikrillayev, K.C. Ayupov, S.A. Valiyev, Sh.B. Sherg’oziyev and G’.X. Mavlonov

Abstract

In the present paper the temperature, photoelectric and magnetic properties of strong compensated Si with impurities atoms of Si, Si, Si, Si, Si, Si, Si complexly have been studied. It has been shown that strong compensated Si leggier by impurities with deep energetic levels are the new type of semiconductor m

Volume 12 | 07-Special Issue

Pages: 2751-2758

DOI: 10.5373/JARDCS/V12SP7/20202414

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