This work mainly focuses on the performance analysis of Tri-Gate SOI FinFET using Sentaurus TCAD simulation. Various simulations are performed on the scaling parameters like Fin width, Fin height and to determine the performance of proposed structure in terms of off current(Ioff ), saturation current(Isat) and Sub-threshold Swing(SS).All the simulations are done through a 3D numeric simulator Sentaurus TCAD. The results show for impact of different fin heights and Fin width is 5nm have Isat, Ioff, threshold voltage and SS are analysed ,which is more suitable for low power circuit applications.
Volume 11 | 02-Special Issue
Pages: 1291-1298