Performance Investigation of Stepped Gate Recessed Channel SON (Silicon on Nothing) MOSFET for Improvement of SCEs

Sikha Mishra and Soumya S. Mohanty

Representation of a simulated based systematic investigation of a ―GRSG-SONMOSFET‖ (―Grooved Rectangular Stepped Gate Silicon-On-Nothing MOSFET‖) with help of simulator like Sentaurus TCAD to controlled SCEs (―Short Channel Effects‖) is shown in this paper. Evaluation has been completed among SOI and SON recessed Channel MOSFETs to recognize the presented structure strength. The evaluation revealed that ―GRSG-SON MOSFET‖ is extra protuberant compared to GG-SOI MOSFET (―Grooved Gate Silicon-On-Insulator MOSFET‖) in expressions of better behavior of switching, high immunity to HCE (―Hot Carrier Effect‖) and SCEs. Further the existence of higher ―thermal conductivity‖ air in buried oxide, the proposed structure is capable to suppress the SHE(―Self Heating Effect‖). For finding the development in performance of SON over SOI models for nano scaled devices of short channel this attentive investigation is relatively beneficial.

Volume 12 | 04-Special Issue

Pages: 332-337

DOI: 10.5373/JARDCS/V12SP4/20201496