Improving the overall performance of the PV cell can play crucial role to the total generated photovoltaic power worldwide. An efficient window layer is essential to check the front surface recombination in the solar cell. In this paper, we explored InGaP window layer for GaAs solar cell and analyzed performance with the help of PC1D simulation software. For this, we have varied thickness and doping level of InGaP window layer and performance of the solar cell has been examined with the help of current-voltage (I-V) characteristics. We also reviewed the effect of temperature on the performance of the solar cell. It has been found that the short circuit current 3.192 A, open circuit voltage 0.8959 V and power conversion efficiency 25.78% of InGaP/GaAs solar cell at window layer thickness 30 nm with doping level 1.00E+17cm3.
Volume 12 | 07-Special Issue
Pages: 2878-2885
DOI: 10.5373/JARDCS/V12SP7/20202430